Index | Element | I.S. |  Z  | Conf. | Level | ¡÷E (eV) | Method | Ref. | |
1 | Si | Si | 14 | 3P2 | 3P0 | 8.151654 | 7.6E-05 | COMP | R400 |
2 | Si | Si | 14 | 3P2 | 3P0 | 8.15175 | 0.00004 | COMP | R16 |
3 | Si | Si | 14 | 3P2 | 3P0 | 8.151 | COMP | R325 | |
4 | Si | Si | 14 | 8.149 | COMP | R406 | |||
5 | Si | Si | 14 | 8.151 | COMP | R407 |
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'I.S.' ---------- the isoelectronic sequence
'Z' ---------- atomic number
'Conf.' ---------- configuration
'Level' ---------- the notation of energy level
'E' ---------- the ionization potential
'¡÷E' ---------- error for ionization potential
'Method' ---------- the method by which the data is produced
'Ref.' ---------- the reference