Index | Element | I.S. |  Z  | Conf. | Level | ¡÷E (eV) | Method | Ref. | |
1 | Si | O | 14 | 1S22S22P4 | 244.9 | THR | R50 | ||
2 | Si | O | 14 | 1S22S22P4 | 246.53 | COMP | R1 | ||
3 | Si | O | 14 | 2P4 | 3P2 | 246.5303 | COMP | R400 | |
4 | Si | O | 14 | 2P4 | 3P2 | 246.5 | COMP | R16 |
¡¾Close¡¿
'I.S.' ---------- the isoelectronic sequence
'Z' ---------- atomic number
'Conf.' ---------- configuration
'Level' ---------- the notation of energy level
'E' ---------- the ionization potential
'¡÷E' ---------- error for ionization potential
'Method' ---------- the method by which the data is produced
'Ref.' ---------- the reference