Index | Element | I.S. |  Z  | Conf. | Level | ¡÷E (eV) | Method | Ref. | |
1 | Si | He | 14 | 1S2 | 2437.67 | THR | R8 | ||
2 | Si | He | 14 | 1S2 | 2437.74 | COMP | R1 | ||
3 | Si | He | 14 | 1S2 | 2438 | +2.4E0 | SEMP | R42 | |
4 | Si | He | 14 | 1S2 | 1S0 | 2437.7401 | COMP | R400 | |
5 | Si | He | 14 | 1S2 | 1S0 | 2437.65 | 0.10 | COMP | R16 |
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'I.S.' ---------- the isoelectronic sequence
'Z' ---------- atomic number
'Conf.' ---------- configuration
'Level' ---------- the notation of energy level
'E' ---------- the ionization potential
'¡÷E' ---------- error for ionization potential
'Method' ---------- the method by which the data is produced
'Ref.' ---------- the reference