Index | Element | I.S. |  Z  | Conf. | Level | ¡÷E (eV) | Method | Ref. | |
1 | Si | F | 14 | 1S22S22P5 | 205.06 | COMP | R1 | ||
2 | Si | F | 14 | 2P5 | 2P3/2 | 205.0575 | COMP | R400 | |
3 | Si | F | 14 | 2P5 | 2P3/2 | 205.27 | 0.02 | COMP | R16 |
4 | Si | F | 14 | 2P5 | 2P3/2 | 205.05 | COMP | R325 | |
5 | Si | F | 14 | 2P5 | 2P3/2 | 205.05 | COMP | R408 |
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'I.S.' ---------- the isoelectronic sequence
'Z' ---------- atomic number
'Conf.' ---------- configuration
'Level' ---------- the notation of energy level
'E' ---------- the ionization potential
'¡÷E' ---------- error for ionization potential
'Method' ---------- the method by which the data is produced
'Ref.' ---------- the reference